Global Silicon Carbide (SiC) Semiconductor Materials and Devices Market Size is Expected to Grow to $2285.31 Million by 2028

Global Silicon Carbide (SiC) Semiconductor Materials and Devices Market Overview

According to Global Market Monitor, the global silicon carbide (SiC) semiconductor materials and devices market size will reach $2285.31 million by 2028 with a CAGR of 18.83% from 2023 to 2028.

Silicon carbide (SiC), a compound formed by C and Si elements, is one of the representatives of the third generation of semiconductor materials with the most mature and highest degree of technology. Compared with traditional semiconductor material silicon, it has obvious advantages. It is an excellent semiconductor material for manufacturing high-voltage, high-temperature, and radiation resistant power semiconductor devices. 

The third-generation semiconductor materials are the core materials in the strategic fields of the information industry, 5G communications, national defense, military, etc. In recent years, China has introduced a series of semiconductor industry encouragement policies to provide policy and financial support for China’s domestic enterprises to promote the development of third-generation semiconductor materials represented by silicon carbide.

Market Competition Status

The SiC industry is a technology-intensive industry with high requirements for operating experience and capital investment.International giant semiconductor companies have completed the technology accumulation in advance. The lack of talents and low technical level of China enterprises restrict the industrialization process of the semiconductor industry. The third generation of the silicon carbide semiconductor industry is in the early stage of industrialization, and the gap between China and overseas enterprises has narrowed significantly.Benefiting from the leading position of 5G communications and the technology level and industrialization scale of emerging industries such as new energy,the huge application market space of China’s domestic silicon carbide devices drives the rapid development of the upstream semiconductor industry. China silicon carbide manufacturers have their advantages. In the context of the global semiconductor material supply shortage, leading international companies have proposed silicon carbide capacity expansion plans and maintain high R&D investment. At the same time, China SiC manufacturers accelerate the layout of the silicon carbide field, seize development opportunities, and catch up with international leading enterprises.

Infineon Technologies Ag was one of the major players operating in the silicon carbide (Sic) semiconductor materials and devices market, holding a share of 28.36% in 2022. The company offers products that include power semiconductors, microcontrollers, security controllers, radio frequency products, and sensors. The products are mainly applied in the automotive, industrial, communications, consumer, and security electronics sectors.

Company Name	Infineon Technologies Ag
Website	www.infineon.com
Established Time	1999
Headquarters	Germany
Product Profile	Infineon's CoolSiC™ Schottky diodes 650V deliver the best price-performance and customer value in the market, leveraging advanced silicon carbide production facilities, a solid track record, the utmost quality, and a very granular and complete combined G5/G6 portfolio. With more compact designs and thin wafer technology, the CoolSiC™ Schottky diodes generation 5 complement our 650V CoolMOS™ super junction MOSFET families, satisfying the application requirements of 650V solutions. The CoolSiC™ Schottky diodes G5 convince with better efficiency compared to Silicon diode alternatives.